// crystalsim · v1.0
CrystalSim
The Semiconductor Crystal Simulator — Testing the Future Beyond Moore's Law
§ the problem
Moore's Law is decelerating.
Silicon is hitting quantum limits. We need a new paradigm — one that doesn't depend on shrinking the transistor further.
Transistor density · logplateau ≈ 2020+
197120202035
§ the solution
Three pillars. One thesis.
Crystal Materials
Beyond silicon: GaN, ZnO, MoS₂, InGaOₓ — wide-bandgap and 2D crystals with 3-10× the carrier mobility.
Piezoelectric Gating
Mechanical stress drives electrostatic gating. PZT and LiNbO₃ deliver sub-femtojoule switching energies.
EM Coupling
Electromagnetic fields tune carrier transport remotely — gate-less, contact-less, lossless control.
§ simon's law
"The end of Moore's Law is not the end of scaling — it is the beginning of crystal-engineered scaling. When silicon plateaus, hybrid Crystal-EM architectures resume the curve."
S(t) = S₀ · 2(t−t₀)/τ · ECCF(crystal, ω)Simon's Law — scaling continues when ECCF > 1
§ evidence
Backed by research from
University of TokyoGeorgia TechBerkeley LabIMECMITStanfordTSMC ResearchKAIST
Ready to test the future?
Eight calibrated modules. Eight crystal materials. One unified thesis.
Enter the SimulatorCrystal-EM Hybrid Transistors · v1.0 · 2026 · Created by W3MCT