// module M3 · piezo engine
Piezo Engine
Stress-induced piezopotential and converse strain across candidate lattices.
§ inputs
100 MPa
100 nm
200 nm
PZT · Pb(Zr,Ti)O₃
d₃₃450 pC/Nεᵣ2000
§ cross-section · direct effect
PZTGenerated Piezopotential
0.254 V
Equivalent Gate Voltage
0.254 V
vs 0.7 V MOSFET baseline
Energy / Cycle
0.229 fJ
Piezo Gating Efficiency
36.3 %
§ signal comparison
Piezo signal0.254 V
MOSFET gate0.70 V
0.7 V
§ key insight
Using PZT at 100 MPa, the piezoelectric effect generates 0.254 V — which is 36.3% of a typical 0.7 V transistor gate. This is a meaningful fraction of the gate signal — viable as an assist or boost layer in a hybrid stack.