// module M3 · piezo engine
Piezo Engine
Stress-induced piezopotential and converse strain across candidate lattices.
Simplified physics§ inputs
100 MPa
100 nm
200 nm
PZT · Pb(Zr,Ti)O₃
d₃₃400 pC/Nεᵣ1300
§ cross-section · direct effect
PZTGenerated Piezopotential
0.348 V
Equivalent Gate Voltage
0.348 V
vs 0.7 V MOSFET baseline
Energy / Cycle
0.278 fJ
Piezo Gating Efficiency
49.6 %
§ signal comparison
Piezo signal0.348 V
MOSFET gate0.70 V
0.7 V
§ key insight
Using PZT at 100 MPa, the piezoelectric effect generates 0.348 V — which is 49.6% of a typical 0.7 V transistor gate. This is a meaningful fraction of the gate signal — viable as an assist or boost layer in a hybrid stack.