// module M2 · transistor sim
Transistor Sim
Architecture-level simulation across 5 device topologies — from the 1971 planar FET to the Crystal-EM hybrid thesis.
// architectures · 5 topologies
// device cross-section
Planar FET
The 40-year silicon workhorse — flat channel, simple gate.
// configuration
Operating Parameters
Si
3 nm
50 nm
0.7 V
300 K
// results · live simulation
Threshold Voltage
1.0× Si0.43 V
ON/OFF Ratio
1.0× Si3.16×10⁶
Subthreshold Swing
1.0× Si69.0 mV/dec
Leakage Current
1.0× Si25.5 nA
Switching Frequency
1.0× Si0.27 GHz
Power per Switch
1.0× Si0.52 fJ
// benchmarks · saved configurations
Comparison Ledger
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