/chip-benchmark · M12

Chip Benchmark

Compare your Crystal-EM design against ten real, published chips. Every number cites a foundry release, IEDM/ISSCC paper, or vendor brief. The "What would it take" calculator turns the thesis into concrete engineering targets.

Reference chip

Apple M4

TSMC N3E · 2024

165 mm² · 28 B trs

Density: 170 MTr/mm²
TDP: 22 W
Perf: 4.4 GHz
Perf/W: 0.2 GHz/W
Perf/mm²: 0.027
$/trs: 0.70 n$

Your Crystal-EM design

Gallium Nitride channel · PZT gate

Hybrid · projection · CEF = 2.19

μ_channel 1800 · d₃₃ 400 · Q 70

Density: 220 MTr/mm²
Perf/W (×Si): 3.19×
Perf/W abs: 0.59
Perf/mm²: 0.087
μ ratio: 1.29×
Maturity: TRL 2–3

Head-to-head (normalised, higher = better)

Bars are normalised per-metric to the larger value (= 100). Crystal-EM numbers are model projections, not measured silicon.

Verdict vs Apple M4

Crystal-EM wins

· Density 1.29× higher
· Perf/W 2.97× higher
· Perf/mm² 3.27× higher

Silicon wins

Crystal-EM dominates.

Bottom line: at CEF = 2.19, Crystal-EM is competitive on density and energy efficiency, but trails on —.

What would it take for Crystal-EM to match the Apple M4?

Crystal mobility ratio

0.59× Si

current: 1.29×

Achievable — AlGaN/GaN 2DEG already reaches 1.29× Si.

ECCF (κ · η_EM)

-0.22

current: 0.70

Achievable by raising Q from 70 toward -22.

Doubling period τ_eff

already ahead

5-yr horizon

Crystal-EM already exceeds the chip on density.

Targets computed against canonical Simon's Law: CEF = (μ_x/μ_Si)(1 + ECCF). See /methodology §3.

Citations for Apple M4

Notes: Density derived from 28B / 165 mm² die-shot estimate.