§ /for/engineers
Post-Moore Scaling — Quantitative, Validated, Open Source
Compact-model simulator for crystal-EM hybrid transistors. Calibrated against published silicon, III-V, and thin-film device data. Eight materials, full citations, MIT-licensed source.
§ validation summary
Compact models calibrated against published silicon, III-V, and thin-film device data.
See /validation for per-device error bounds and calibration roadmap.
| Device | Metric | Published | CrystalSim | Δ | Status |
|---|---|---|---|---|---|
| TSMC N7 FinFET | I_on / W (µA/µm) | ~700 | 1864 | +166.3% | Calibration needed |
| TSMC N7 FinFET | SS (mV/dec) | 68 | 70.00 | +2.9% | within ±15% |
| TSMC N7 FinFET | V_th (mV) | ~250 | 280 | +11.8% | within ±15% |
| AlGaN/GaN HEMT | 2DEG mobility (cm²/V·s) | 1500–2000 | 1000 | -33.3% | Calibration needed |
| ZnO TFT | µ_FE nanocrystalline (cm²/V·s) | 100–200 | 200 | in range | within ±15% |
All discrepancies are tracked at /validation. Calibration improvements are logged in the changelog.
§ canonical equation
Simon's Law (canonical form)
P(t) = P₀ · 2^((t − t₀) / τ_eff) · CEF CEF = (μ_crystal / μ_Si) · (1 + κ · η_EM)
Each term is dimensionless; P(t) inherits the units of the silicon baseline. Derivation, term-by-term sourcing, and calibration against published GaN HEMT data are in the whitepaper.
Compact Models
- • BSIM-CMG (FinFET, nanosheet)
- • BSIM-IMG (FD-SOI / nanosheet IMG)
- • BSIM4 (planar bulk, 28 nm and above)
- • Berkeley NEEDS (HEMT, piezo)
- • Drift-diffusion + saturation velocity
Material Database
- • 8 crystals: Si, GaN, ZnO, InGaOx,
- PZT, MoS₂, Quartz, LiNbO₃
- • Per-material citation strings
- • Bulk vs 2DEG vs thin-film ranges
- • Sze 4th ed., Taur & Ning, IRDS 2024
Engineering Outputs
- • I-V family (V_GS-stepped)
- • Transfer + V_th, SS, DIBL, g_m
- • S-parameters, f_T, f_max
- • Self-heating (iterative T_j)
- • Reliability: HCI, BTI, TDDB
Open questions, model fixes, parameter additions welcome.
MIT licensed. File issues at github.com/crystalsim.